High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO-Reference-Cited by-同舟云学术

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High-efficiency GaN-based LED with patterned SiO2 current blocking layer deposited on patterned ITO

Published:2019-01 Issue: Volume:109 Page:627-632
ISSN:0030-3992
Container-title:Optics & Laser Technology
language:en
Short-container-title:Optics & Laser Technology

Author:

Zhou Shengjun,Liu Mengling,Xu Haohao,Liu Yingce,Gao Yilin,Ding Xinghuo,Lan Shuyu,Fan Yuchen,Gui Chengqun,Liu Sheng

Funder

National Natural Science Foundation of China

National Basic Research Program of China

National Science Fund for Distinguished Young Scholars

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference32 articles.

1. Efficiency enhancement of blue light emitting diodes by eliminating V-defects from InGaN/GaN multiple quantum well structures through GaN capping layer control;Tsai;Appl. Surf. Sci.,2018

2. Characteristics of GaN-based 500 nm light-emitting diodes with embedded hemispherical air-cavity structure;Zhang;J. Appl. Phys.,2018

3. Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films;Fan;Superlattice Microst.,2018

4. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes;Hu;Sci. Rep.,2017

5. ITO/Ag/AlN/Al2O3 multilayer electrodes with conductive channels: application in ultraviolet light-emitting diodes;Lee;Appl. Surf. Sci.,2018

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1. Enhancement of NiO/Si solar cell by adding porous silicon and a silicon dioxide SiO2 carrier selective layer;Materials Letters;2024-04

2. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01

3. Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes With Lattice- Matched AlInGaN Insertion in n-AlGaN Layer;IEEE Photonics Journal;2023-06

4. The Preparation of Cuo Film Under Different Annealing Atmospheres and Investigation of the Excellent Electrical and Undoped Tunable Electroluminescence Characteristics of Au/I-Cuo/N-Gan Led;2023

5. Balanced Resistivity in n-AlGaN Layer to Increase the Current Uniformity for AlGaN-Based DUV LEDs;IEEE Photonics Technology Letters;2022-10-15

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