Author:
Sameith D.,Mönch J.P.,Tiller H.-J.,Schade K.
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Cited by
33 articles.
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1. Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products;Journal of Applied Physics;2014-12-14
2. Molecular structure, atomization energy, ionization energy, electron affinity and vibrational spectrum of SiX2(X = F, Cl, Br, I) by theoretical methods;Main Group Chemistry;2008-03
3. Spatial profile monitoring of etch products of silicon in HBr∕Cl2∕O2∕Ar plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2007-03
4. Characterization of SiN and other transient species in a silicon tetrachloride–nitrogen discharge;Chemical Physics Letters;2003-01
5. Transient plasma-induced emission analysis of laser-desorbed species during Cl2 plasma etching of Si;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-11