Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products
Author:
Affiliation:
1. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Kyoto-daigaku Katsura, Nishikyo-ku, Kyoto 615-8540, Japan
Funder
A Grant-in-Aid for Scientific Research on Innovative Areas (Frontier science of interactions between plasmas and nano-interfaces) from the Ministry of Education, Culture, Sports, Science and Technology, Japan.
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4903956
Reference114 articles.
1. Developments of Plasma Etching Technology for Fabricating Semiconductor Devices
2. Plasma etching: Yesterday, today, and tomorrow
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4. Towards a controlled patterning of 10 nm silicon gates in high density plasmas
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