Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates-Reference-Cited by-同舟云学术

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Impact of thermal oxidation on the electrical transport and chemical & electronic structure of the GaN film grown on Si and sapphire substrates

Published:2021-09 Issue: Volume:5 Page:100106
ISSN:2666-5239
Container-title:Applied Surface Science Advances
language:en
Short-container-title:Applied Surface Science Advances

Author:

Jain Shubhendra Kumar,Goel Pratibha,Varshney Urvashi,Garg Tushar,Aggarwal Neha,Krishna Shibin,Singh Sandeep,Gupta Govind

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces

Reference36 articles.

1. Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga2O3;Polyakov;J. Appl. Phys.,2018

2. Guest editorial: the dawn of gallium oxide microelectronics;Higashiwaki;Appl. Phys. Lett.,2018

3. Current status of Ga2O3power devices;Higashiwaki;Japan. J. Appl. Phys.,2016

4. β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes;Qian;AIP Adv.,2016

5. 16 - advances in Ga2O3 solar-blind UV photodetectors;Pratiyush,2019

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of oxygen plasma power on the performance of Ga2O3 passivated GaN ultraviolet photodetectors;Applied Surface Science;2024-11

2. Revealing the photo-sensing capabilities of a super-flexible, paper-based wearable a-Ga2O3 self-driven ultra-high-performance solar-blind photodetector;Chemical Engineering Journal;2024-09

3. Growth of β-Ga2O3 nanostructures by thermal oxidation of GaN-on-sapphire for optoelectronic devices applications;Journal of Alloys and Compounds;2024-08

4. PLD‐Grown Semi‐Insulating Ga₂O₃ Thin Film‐Based Optoelectronic Artificial Synaptic Devices for Neuromorphic Computing Applications;Advanced Materials Technologies;2024-07-03

5. Structure and magneto-electric properties of hydrothermally prepared nanocrystalline GaxFe2−xO3 (x = 0.7, 1 & 1.3);Journal of Materials Science: Materials in Electronics;2024-04

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