β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes-Reference-Cited by-同舟云学术

β-Ga2O3 solar-blind deep-ultraviolet photodetector based on a four-terminal structure with or without Zener diodes

Published:2016-04 Issue:4 Volume:6 Page:045009
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Qian L. X.¹²^ORCID,Liu X. Z.¹²,Sheng T.¹²,Zhang W. L.¹²,Li Y. R.¹²,Lai P. T.³

Affiliation:

1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

3. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, Hong Kong

Funder

Research Fund for the Doctoral Program of Higher Education of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4947137

Reference20 articles.

1. Short-wavelength solar-blind detectors-status, prospects, and markets

2. A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

3. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga2O3 solar-blind ultraviolet photodetectors

4. Enhancement of responsivity in solar-blind β-Ga2O3 photodiodes with a Au Schottky contact fabricated on single crystal substrates by annealing

5. A $\beta$-$\hbox{Ga}_{2} \hbox{O} _{3}$ Solar-Blind Photodetector Prepared by Furnace Oxidization of GaN Thin Film

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