Disorder-induced Anderson localization in GaAs1−xPx
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference8 articles.
1. Evidence for Exciton Localization by Alloy Fluctuations in Indirect-GapGaAs1−xPx
2. Proc. 13th Int. Symp. on GaAs and related compounds;Wolford,1982
3. A new interimpurity recombination in GaP; revised values for acceptor binding energies
4. Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorCdSxSe1−x
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electrical transport in amorphous nanofilms embedded with crystalline grains at low temperatures;Nanotechnology;2020-06-02
2. Optical properties of GaAs/GaNxAs1−x quantum well structures grown by migration-enhanced epitaxy;Journal of Crystal Growth;2002-07
3. Photoluminescence study of Al doping in GaAs grown by molecular‐beam epitaxy;Journal of Applied Physics;1996-11-15
4. Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition;Journal of Crystal Growth;1994-12
5. Optical properties of thin, strained layers ofGaAsxP1−xgrown on (111)-oriented GaP;Physical Review B;1993-03-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3