DLTS of grown-in dislocations in p- and n- type high-purity germanium
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference28 articles.
1. Energy band associated with dangling bonds in silicon
2. Shallow dislocation states in Ge. Thermal treatment effects
3. Deformation-induced point defects in germanium
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