Energy band associated with dangling bonds in silicon
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.22.1926/fulltext
Reference39 articles.
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1. Mixed role of surface on intrinsic losses in silicon nanostructures;Journal of Applied Physics;2016-03-21
2. Fundamentals of silicon material properties for successful exploitation of strain engineering in modern CMOS manufacturing;IEEE Transactions on Electron Devices;2006-05
3. DLTS of grown-in dislocations in p- and n- type high-purity germanium;Solid State Communications;1985-06
4. The electronic properties of dangling bonds in silicon;Physica B+C;1983-02
5. Electrical properties of dislocation lines in silicon;Philosophical Magazine B;1982-07
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