Deformation-induced point defects in germanium
Author:
Affiliation:
1. a IV. Physikalisches Institut der Universität Göttingen and Sonderforschungsbereich , 126 Göttingen/Clausthal, D-34 Göttingen, F.R. Germany
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818308226431
Reference7 articles.
1. Dislocation energy levels in Ge
2. On the Energy Spectrum of Dislocations in Silicon
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. Capacitance Transient Spectroscopy
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