Effect of barrier configuration on excitonic recombination in Ga.47In.53As/Al.48In.52As multi quantum well structures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference15 articles.
1. Room‐temperature excitons in 1.6‐μm band‐gap GaInAs/AlInAs quantum wells
2. Observation of heavy-hole and light-hole excitons in InGaAs/InAlAs MQW structures at room temperature
3. Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperature
4. Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy
5. Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
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1. Vertical transport in all-binary GaAs/AlAs short-period superlattices and carrier trapping and detrapping dynamics by different quantum wells;physica status solidi (b);2007-08
2. Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer;Journal of Applied Physics;1991-12-15
3. Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells;Journal of Luminescence;1990-03
4. Molecular beam epitaxy of semiconductor interfaces and quantum wells for advanced optoelectronic devices;Surface and Interface Analysis;1988-07
5. The effects of free carriers on the photoluminescence and photoluminescence excitation spectra of InGaAs-InP quantum wells;Semiconductor Science and Technology;1988-07-01
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