Raman scattering studies of Si1-xGex epitaxial layers grown by atmospheric pressure chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference30 articles.
1. Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors
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3. Strain, composition and crystalline perfection in thin SiGe layers studied by Raman spectroscopy;Thin Solid Films;2008-11
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