Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101003
Reference6 articles.
1. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
2. GexSi1−xstrained‐layer heterostructure bipolar transistors
3. Limited reaction processing: Silicon epitaxy
4. Heterostructure bipolar transistors and integrated circuits
5. Indirect band gap of coherently strainedGexSi1−xbulk alloys on〈001〉silicon substrates
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1. Determination of bandgap in SiGe strained layers using a pn heterojunction C-V;Acta Physica Sinica;2004
2. Base resistance and effective bandgap reduction in n-p-n Si/Si/sub 1-x/Ge/sub x//Si HBTs with heavy base doping;IEEE Transactions on Electron Devices;1996-03
3. Schottky barrier heights of Ir/p-Si and Ir/strained p-Si1-xGexjunctions;Semiconductor Science and Technology;1995-04-01
4. Asymmetric Mosaic Spread During Relaxation in SiGe/ Si Strained Layer Superlattices Grown on Miscut Substrates;MRS Proceedings;1995
5. Si/Si/sub 1-x/Ge/sub x/ valence band discontinuity measurements using a semiconductor-insulator-semiconductor (SIS) heterostructure;IEEE Transactions on Electron Devices;1994
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