Observation of a new thermally induced photoluminescence emission in silicon-doped Al0.3Ga0.7As
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference8 articles.
1. Doping effects in AlGaAs
2. P. Souza, E.V.K. Rao, F. Alexandre and M. Gauneau (to appear in Journal of Applied Physics).
3. Free‐to‐bound transitions in Si‐doped epitaxial Ga1−xAlxAs
4. Photoluminescence of shallow acceptors in epitaxial AlxGa1−xAs
5. Photoluminescence investigation of residual shallow acceptors in AlxGa1−xAs grown by metalorganic vapor phase epitaxy
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As;Journal of Electronic Materials;1995-07
2. Photoluminescence measurements of complex defects in Si‐doped Al0.3Ga0.7As;Journal of Applied Physics;1994-12-15
3. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15
4. Competition between negative and positive photoconductivity in silicon planar‐doped GaAs;Applied Physics Letters;1994-04-25
5. SiAsrelated photoluminescence emissions in low‐temperature AlxGa1−xAs grown by molecular beam epitaxy;Journal of Applied Physics;1992-08-15
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