SiAsrelated photoluminescence emissions in low‐temperature AlxGa1−xAs grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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SiAsrelated photoluminescence emissions in low‐temperature AlxGa1−xAs grown by molecular beam epitaxy

Published:1992-08-15 Issue:4 Volume:72 Page:1498-1501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Souza P. L.,Rao E. V. K.,Alexandre F.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.351716

Reference10 articles.

1. Investigation of surface roughness of molecular beam epitaxy Ga1−xAlxAs layers and its consequences on GaAs/Ga1−xAlxAs heterostructures

2. Influence of Substrate Temperature on the Morphology of Al x Ga1 − x As Grown by Molecular Beam Epitaxy

3. Photoluminescence in AlGaAs/GaAs heterojunction bipolar transistors

4. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

5. The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence of AlxGa1−xAs alloys;Journal of Applied Physics;1994-05-15

2. gallium aluminum arsenide (Ga(1-x)Al(x)As), optical properties of deep defects;Impurities and Defects in Group IV Elements, IV-IV and III-V Compounds. Part b: Group IV-IV and III-V Compounds.

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