DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As-Reference-Cited by-同舟云学术

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DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As

Published:1995-07 Issue:7 Volume:24 Page:907-912
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Medeiros-Ribeiro G.,de Oliveira A. G.,Ribeiro G. M.,Soares D. A. W.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02653340.pdf

Reference15 articles.

1. D.J. Chadi and K.J. Chang,Phys. Rev Lett. 61, 873 (1988);Phys. Rev. B 39, 10336 (1989).

2. P.M. Mooney,J. Appl. Phys. 67, R1 (1990).

3. J.F. Sampaio, A.S. Chaves, G.M. Ribeiro, P.S.S. Guimaraes, R.P. de Carvalho and A.G. de Oliveira,Phys. Rev. B 44,10933 (1991).

4. T.N. Theis, P.M. Mooney and B.D. Parker,J. Electron. Mater. 20, 35 (1991).

5. T. Ishikawa, K. Kondo, S. Hiyamizu and A. Shibatomi,Jpn. J. of Appl. Phys. Part 2 (Letters) 24, L408 (1985).

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band-gap shift in heavily dopedn-typeAl0.3Ga0.7Asalloys;Physical Review B;1999-07-15

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