Capture cross section of trapping centres in polar semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Determination of Deep Centers in Conducting Gallium Arsenide
2. Transient Phenomena in Capacitance and Reverse Current in a GaAs Schottky Barrier Diode
3. Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
4. Trapping analysis in gallium arsenide
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4. Chapter 4 Models for Mid-Gap Centers in Gallium Arsenide;Semiconductors and Semimetals;1984
5. Nonadiabatic formulation for radiationless transitions induced by classical lattice vibrations;Physical Review B;1982-10-01
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