Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes-Reference-Cited by-同舟云学术

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Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes

Published:1967-04 Issue:4 Volume:6 Page:503-508
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Furukawa Yoshitaka,Ishibashi Yoshio

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Broadening in the deep-level transient spectra of defects in GaAs1-xSbxalloys;Journal of Physics C: Solid State Physics;1987-08-30

2. Chapter 2 Density of States from Junction Measurements in Hydrogenated Amorphous Silicon;Semiconductors and Semimetals;1984

3. Calculation of the dynamic response of Schottky barriers with a continuous distribution of gap states;Physical Review B;1982-04-15

4. Fast digital apparatus for capacitance transient analysis;Review of Scientific Instruments;1980-09

5. Spectroscopies thermique et optique des niveaux profonds : Application à l'étude de leur relaxation de réseau;Revue de Physique Appliquée;1980

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