Broadening in the deep-level transient spectra of defects in GaAs1-xSbxalloys
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering,Condensed Matter Physics
Link
http://stacks.iop.org/0022-3719/20/i=24/a=003/pdf
Reference15 articles.
1. Alloy disorder broadening of defect energy levels
2. Schottky-barrier capacitance measurements for deep level impurity determination
3. Trapping Effects in Au-n-Type GaAs Schottky Barrier Diodes
4. Study of non-exponential electron capture by the main electron trap in GaAs0.62P0.38
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Deep donors in tellurium and sulphur codoped GaSb;Semiconductor Science and Technology;1996-07-01
2. Deep donor levels (DXcenters) in III‐V semiconductors;Journal of Applied Physics;1990-02
3. Transient spectroscopy and disorder;Radiation Effects and Defects in Solids;1989-12
4. Paired temperature spectroscopy (PATS) for gap states in ordered and disordered semiconductors: I. Theoretical analysis;Semiconductor Science and Technology;1987-11-01
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