Deep radiative transitions in AlxGa1−xAs:Sn
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. Wave functions and optical cross sections associated with deep centers in semiconductors
2. Photoluminescence of GaxAl1-xAs Crystals Grown by Liquid Phase Epitaxy
3. New Deep‐Level Luminescence in GaAs:Sn
4. Photolumineszenz-spektrum des Sn-Akzeptors in GaAs
5. Injection‐level dependence, frequency response, and thermal quenching of the 1.39‐eV luminescence in Sn‐doped LPE GaAs
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Shallow and deep donors inn‐type Ga1−xAlxAs: Sn grown by metalorganic vapor‐phase epitaxy;Journal of Applied Physics;1988-05
2. Photoluminescence spectra and line‐shape synthesis of a conduction‐band‐to‐deep‐acceptor transition in GaAs:Sn;Journal of Applied Physics;1986-12-15
3. Analysis of free‐to‐bound flourescence line shapes for a deep level in GaAs:Sn;Journal of Applied Physics;1982-04
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