Photoluminescence spectra and line‐shape synthesis of a conduction‐band‐to‐deep‐acceptor transition in GaAs:Sn
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337464
Reference9 articles.
1. Analysis of fluorescence line shapes for free‐to‐bound transitions in semiconductors
2. Analysis of free‐to‐bound flourescence line shapes for a deep level in GaAs:Sn
3. Photolumineszenz-spektrum des Sn-Akzeptors in GaAs
4. New Deep‐Level Luminescence in GaAs:Sn
5. Photoluminescence of GaxAl1-xAs Crystals Grown by Liquid Phase Epitaxy
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. FAST ALGORITHM FOR COMPUTATIONAL STUDY OF DEEP LEVEL PHOTOLUMINESCENCE SPECTRA;International Journal of Modern Physics C;1994-02
2. Temperature Dependent Minority Carrier Recombination on GaAs: Sn;Physica Status Solidi (a);1991-06-16
3. Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs;Journal of Crystal Growth;1989-05
4. Capless Rapid Thermal Annealing of GaAs Implanted with Si+ Using an Enhanced Overpressure Proximity Method;Journal of The Electrochemical Society;1987-08-01
5. Analysis of fluorescence line shapes for free‐to‐bound transitions in semiconductors;Journal of Applied Physics;1986-12-15
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