Injection‐level dependence, frequency response, and thermal quenching of the 1.39‐eV luminescence in Sn‐doped LPE GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.323536
Reference29 articles.
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4. The identity of the EPR A-center and the self-activated luminescence center in ZnS: Cl
5. Nature of the red-copper luminescence centre in ZnS crystals as elucidated by polarization measurements
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1. The effects of Zn-vapor or Te-vapor heat treatment on the luminescence of ZnTe;Journal of Electronic Materials;1986-11
2. Effects of Cd‐vapor and Te‐vapor heat treatments on the luminescence of solution‐grown CdTe:In;Journal of Applied Physics;1982-09
3. Deep radiative transitions in AlxGa1−xAs:Sn;Solid State Communications;1980-11
4. Luminescence studies of the 1.36‐eV band and the edge emission in melt‐grown GaAs : Cu;Journal of Applied Physics;1979-05
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