Transient photoconductivity, trap saturation and optical bias in n-type a-Si:H
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
2. Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurements
3. The long-time drift mobility in aSi:H: Optical bias and temperature dependence
4. Transient-photocurrent study of localized states at the conduction-band edge of a-Si: H
5. Influence of doping on transport and recombination of excess charge carriers ina−Si:H
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1. Determination of the density of localized states in disordered semiconductors using transient photocurrent spectroscopy with a finite-width light pulse excitation;Philosophical Magazine Letters;2008-03
2. Time photocurrent response and the density of localised states in disordered semiconductors;Solid State Communications;2008-02
3. Determination of the density of localized states in semiconductors from the pre-recombination transient photoconductivity;Solid-State Electronics;2008-01
4. Transient photoconductivity, density of tail states and doping effect in amorphous silicon;Solid State Communications;1999-10
5. Investigation of transient transport and recombination phenomena in semiinsulating GaAs;Zeitschrift für Physik B Condensed Matter;1994-12
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