Transient-photocurrent study of localized states at the conduction-band edge of a-Si: H
Author:
Affiliation:
1. a Electrotechnical Laboratory , 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki , 305 , Japan
Publisher
Informa UK Limited
Subject
General Physics and Astronomy,General Chemical Engineering
Link
https://www.tandfonline.com/doi/pdf/10.1080/13642818508238931
Reference17 articles.
1. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
2. Anomalous surface photoconductivity in hydrogenated amorphous silicon
3. Transient-photocurrent studies ina−Si:H
4. Influence of various distributions of localized states upon transit pulse dispersion in amorphous semiconductors
5. Ohmic Contact Properties of Magnesium Evaporated onto Undoped and P-doped a-Si: H
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