Influence of doping on transport and recombination of excess charge carriers ina−Si:H
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.33.8878/fulltext
Reference9 articles.
1. Effects of doping on transport and deep trapping in hydrogenated amorphous silicon
2. Dispersive Transport and Recombination Lifetime in Phosphorus-Doped Hydrogenated Amorphous Silicon
3. Comparative study of time‐resolved conductivity measurements in hydrogenated amorphous silicon
4. Transient conductivity and photoconductivity ina-Si:H
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1. Effect of illumination on hydrogenated amorphous silicon thin films doped with chalcogens;Journal of Non-Crystalline Solids;2009-09
2. Transient photoconductivity ofa-Si1−xGex:H alloys;Physical Review B;1991-07-15
3. Transient photoconductivity, trap saturation and optical bias in n-type a-Si:H;Solid State Communications;1990-05
4. Charge carrier kinetics during growth of a-Si:H layers;Journal of Non-Crystalline Solids;1989-12
5. State distribution and ambipolar diffusion length inn‐type hydrogenated amorphous silicon;Journal of Applied Physics;1989-07
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