Effect of surface states on the amphoteric behavior of Sn in vapor epitaxial GaAs-Reference-Cited by-同舟云学术

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Effect of surface states on the amphoteric behavior of Sn in vapor epitaxial GaAs

Published:1973-02 Issue:4 Volume:12 Page:283-285
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Wolfe C.M.,Stillman G.E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference12 articles.

1. Proc. 2nd. Int. Symp. GaAs;Wolfe,1969

2. The Chemistry of Imperfect Crystals;Kroger,1964

3. Ionization Interaction between Impurities in Semiconductors and Insulators

4. Influence of surface band bending on the incorporation of impurities in semiconductors: Te in GaAs

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermodynamics and Defect Chemistry of Compound Semiconductors;Electronic Materials;1991

2. Doping of gallium arsenide in MOCVD: Equilibrium calculations;Journal of Crystal Growth;1990-05

3. Mössbauer spectroscopy of Sn‐doped GaAs grown by metalorganic vapor‐phase epitaxy;Journal of Applied Physics;1987-09

4. The sulfur incorporation and the growth of GaAs submicrometer epilayers in Ga-AsCl3-H2 system;Journal of Electronics (China);1984-01

5. Impurity trapping during gas-phase epitaxy on gallium arsenide;Soviet Physics Journal;1983-10

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