1. Yu. G. Sidorov, ?Doping gallium arsenide in gas-transport epitaxy,? in: Semiconductor Films for Microelectronics [in Russian], Nauka, Novosibirsk (1977), p. 107.
2. J. V. DiLorenzo, J. Cryst. Growth,17, 189 (1972).
3. J. V. DiLorenzo and G. E. Moore, J. Electrochem. Soc.,118, No. 11, 1823 (1971).
4. P. Rai-Choudhary, J. Cryst. Growth,11, 113 (1971).
5. L. A. Ivanyutin and N. N. D'yachkova, Fiz. Tekh. Poluprovodn.,5, No. 6, 1158 (1971).