Subbandgap absorption spectra of slightly doped a-Si:H measured with constant photocurrent method (CPM) and photothermal deflection spectroscopy (PDS)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference8 articles.
1. How to reach more precise interpretation of subgap absorption spectra in terms of deep defect density in a-Si:H
2. Photothermal deflection spectroscopy and detection
3. Density of the gap states in undoped and doped glow discharge a-Si:H
4. Amorphous Silicon and Related Materials;Curtins,1988
5. Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films
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