Optically active defects in SiC, SiOx single layers and SiC/SiOx hetero-superlattices

Author:

Ding Kaining,Aeberhard Urs,Astakhov Oleksandr,Beyer Wolfhard,Finger Friedhelm,Carius Reinhard,Rau Uwe

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Silicon quantum dot formation in SiC/SiOx hetero-superlattice;Ding;Energy Procedia,2011

2. Silicon quantum dot superlattices: modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications;Jiang;J. Appl. Phys.,2006

3. E. Cho, Y. Cho, T. Trupke, R. Corkish, G. Conibeer, M. Green, Silicon nanostructures for all-silicon tandem solar cells, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, Paris, France, June 7–11, 2004, 2004, pp. 235–238.

4. Seven excitons at a cost of one: redefining the limits for conversion efficiency of photons into charge carriers;Schaller;Nano Lett.,2006

5. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels;Luque;Phys. Rev. Lett.,1997

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