The effect of gallium implantation on the intermixing of InGaAs/GaAs strained quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference9 articles.
1. Disorder of an AlAs‐GaAs superlattice by silicon implantation
2. Implantation disordering of AlxGa1−xAs superlattices
3. Comparative studies of ion‐induced mixing of GaAs‐AlAs superlattices
4. Kinetics of implantation enhanced interdiffusion of Ga and Al at GaAs‐GaxAl1−xAs interfaces
5. Compositional Disordering of GaAs-AlxGa1-xAs Superlattice by Ga Focused Ion Beam Implantation and its Application to Submicron Structure Fabrication
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mechanisms for implantation induced interdiffusion at In0.53Ga0.47As/In0.52Al0.48As heterointerfaces;Materials Science and Engineering: B;1997-02
2. Ion beam induced interdiffusion at the InGaAs/InAlAs interfaces;Ion Beam Modification of Materials;1996
3. Diffusion of ion beam created vacancies and their effect on intermixing: A gambler’s ruin approach;Journal of Applied Physics;1994-09-15
4. Vacancy controlled interdiffusion in III–V heterostructures;Materials Science and Engineering: B;1993-11
5. Comparison of the effects of ion implantation induced interdiffusion in GaAs/AlGaAs and InGaAs/GaAs single quantum wells;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1993-01
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