Metastability of arsenic antisite-related defects created by electron irradiation in gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Photocapacitance quenching effect for “oxygen” in GaAs
2. Auger de-excitation of a metastable state in GaAs
3. Recovery Effect of Deep Level Luminescence Induced by Below Band-Gap Excitation in GaAs
4. Optically induced regeneration of the stable configuration of the EL2 defect in GaAs
5. Temperature dependence of the photoinduced EL2*→EL20recovery process observed by infrared absorption
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1. Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy;PHYS STATUS SOLIDI B;1999
2. Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs;Brazilian Journal of Physics;1999-12
3. Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs;Solid State Communications;1999-05
4. Chapter 5 Positron Annihilation Spectroscopy of Defects in Semiconductors;Semiconductors and Semimetals;1998
5. Computational Modelling of Atomic-Scale Defect Phenomena in Compound Semiconductors;Frontiers in Materials Modelling and Design;1998
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