Auger de-excitation of a metastable state in GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference16 articles.
1. Shallow versus deep In donors in CdF2 crystals
2. Photoelectronic properties of high‐resistivity GaAs : O
3. Electron traps in bulk and epitaxial GaAs crystals
4. Long‐lifetime photoconductivity effect inn‐type GaAlAs
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