Generation of EL2 defects by a 6-MeV proton irradiation of semi-insulating GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference19 articles.
1. On the microscopic structures of three arsenic antisite-related defects in gallium arsenide studied by optically detected electron nuclear double resonance
2. Identification of the isolated arsenic antisite defect in electron-irradiated gallium arsenide and its relation to theEL2 defect
3. Irradiation-induced defects in GaAs
4. Optically detected magnetic resonance study of an arsenic-antisite–arsenic-vacancy complex in GaAs
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1. Effect of 60Co γ-ray irradiation on electrical properties of Ti/Au/GaAs1−xNx Schottky diodes;Current Applied Physics;2016-08
2. The influence of impurities on radiative recombination via EL2 centers in gallium arsenide single crystals;Semiconductors;2004-01
3. High-power and high-temperature FET technology;SPIE Proceedings;2000-12-18
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