Lateral transport in GaAs-(Al,Ga)As superlattices investigated by transient grating measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. In-well ambipolar diffusion in room-temperature InGaAsP multiple quantum wells;IEEE Journal of Quantum Electronics;2000-09
2. Transient Grating Studies of Carrier Diffusion and Mobility in Semiconductors;Semiconductors and Semimetals;1998
3. Non-Equilibrium Carrier Dynamics in a-Si:H/a-SiC:H Multilayers;MRS Proceedings;1992
4. 4.3.7 References for 4.3;Landolt-Börnstein - Group III Condensed Matter
5. 4.3.2 GaAs (and Al{1-y}Ga{y}As)-based structures;Landolt-Börnstein - Group III Condensed Matter
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