Non-Equilibrium Carrier Dynamics in a-Si:H/a-SiC:H Multilayers

Abstract

ABSTRACTFor a series of a-Si:H/a-SiC:H quantum well structures and superlattices the diffusion coefficient for the lateral ambipolar motion of optically excited free carriers was measured using the transient grating technique. A significant dependence of the diffusion coefficient on the well layer thickness was found. With decreasing quantum well thickness the lateral mobility decreases. These observations may be explained assuming that scattering due to interface roughness is the dominant scattering process.