Evidence for the neutral charge state model of the DX center in aluminium gallium arsenide
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference14 articles.
1. Deep donor levels (DXcenters) in III‐V semiconductors
2. Theory of the Atomic and Electronic Structure ofDXCenters in GaAs andAlxGa1−xAsAlloys
3. Long‐lifetime photoconductivity effect inn‐type GaAlAs
4. Comprehensive analysis of Si-dopedAlxGa1−xAs(x=0 to 1): Theory and experiments
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evidence for bistable defects in 6H-SiC;Solid State Communications;1994-03
2. Charge state of theDXcenter in aluminum gallium arsenide from photo-Hall measurements;Physical Review B;1993-09-15
3. Investigation of the charge state of the DX centre through analysis of electron mobility data in AlxGa1-xAs;Semiconductor Science and Technology;1993-03-01
4. DX Centers in AlGaAs and Pressurised GaAs;MRS Proceedings;1993
5. Evidence for the neutral charge state model of the DX center from low temperature Hall mobility measurements;Applied Physics Letters;1992-05-18
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