Photoluminescence of Eu2+ and Sm2+ ions in CaF2 pseudomorphic layers grown by MBE on Si (111)
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference20 articles.
1. MBE‐grown fluoride films: A new class of epitaxial dielectrics
2. Summary Abstract: High resolution electron microscopy of CaF2/silicon interfaces
3. Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxialCaF2/Si(111) interface
4. Structure of the Si(111)/CaF2 interface
5. Strain measurement of epitaxial CaF2 on Si (111) by MeV ion channeling
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2. Epitaxial growth of Eu doped CaF2 thin film on CaF2 (111);AIP Conference Proceedings;2012
3. Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111);Physical Review B;2010-08-31
4. Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer;Journal of Applied Physics;2009-04-15
5. Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures;Semiconductors;2008-11
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