Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP(001) substrates
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference11 articles.
1. Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties and Applications;Shay,1975
2. Single phase ZnSnAs[sub 2] grown by molecular beam epitaxy
3. MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP substrates
4. MBE growth of Mn-doped ZnSnAs2 thin films
5. Electrotransport Properties of p-ZnSnAs2Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
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