MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
2. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
3. Doping of low-temperature GaAs and GaMnAs with carbon
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5. MBE growth and properties of GaMnAs with high level of Zn acceptor incorporation
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1. First-principles study of electronic and magnetic properties in site dependent Fe-doped chalcopyrite ZnSnAs2semiconductors: Comparison with those of Mn- and Cr-doped ZnSnAs2;Journal of Magnetism and Magnetic Materials;2024-05
2. Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates;Japanese Journal of Applied Physics;2020-02-24
3. Spatial distribution of substitutional Mn-As clusters in ferromagnetic (Zn,Sn,Mn)As2 thin films revealed by image reconstruction of atom probe tomography data;Journal of Applied Physics;2019-02-21
4. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration;Journal of Applied Physics;2018-01-18
5. Growth and characterization of (Zn,Sn,Ga)As2thin films grown on GaAs(001) substrate by molecular beam epitaxy;physica status solidi (b);2017-02
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