Electrotransport Properties of p-ZnSnAs2Thin Films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference11 articles.
1. Single phase ZnSnAs[sub 2] grown by molecular beam epitaxy
2. Room-temperature ferromagnetism in chalcopyrite Mn-doped ZnSnAs2 single crystals
3. MBE growth of Mn-doped Zn–Sn–As compounds on (001) InP substrates
4. The preparation and semiconducting properties of single crystals of ZnSnAs2 compound B
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1. First-principles study of electronic and magnetic properties in site dependent Fe-doped chalcopyrite ZnSnAs2semiconductors: Comparison with those of Mn- and Cr-doped ZnSnAs2;Journal of Magnetism and Magnetic Materials;2024-05
2. Anomalous atomic fluctuations in the local structure around Mn of (Zn,Sn,Mn)As2 thin films;Physical Review B;2022-08-29
3. Epitaxial growth and characterization of Cr-doped ZnSnAs2thin films on InP substrates;Japanese Journal of Applied Physics;2020-02-24
4. First-principles theoretical study on carrier doping effects induced by Zn vacancies in Mn-doped in ZnSnAs2;Japanese Journal of Applied Physics;2019-10-22
5. Spatial distribution of substitutional Mn-As clusters in ferromagnetic (Zn,Sn,Mn)As2 thin films revealed by image reconstruction of atom probe tomography data;Journal of Applied Physics;2019-02-21
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