Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. Type II heterojunctions in the GaInAsSb/GaSb system
2. Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
3. Band gaps and band offsets in strained GaAs1−ySby on InP grown by metalorganic chemical vapor deposition
4. Type II GaAsxSb1−x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution
5. InAsSb‐based mid‐infrared lasers (3.8–3.9 μm) and light‐emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
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1. Long-Wavelength Luminescence of InSb Quantum Dots in Type II Broken-Gap Heterostructure;Electronics;2023-01-26
2. Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells;Optical and Quantum Electronics;2017-01-16
3. Photovoltaic Detector Based on Type II Heterostructure with Deep AlSb/InAsSb/AlSb Quantum Well in the Active Region for the Mid-Infrared Spectral Range;Journal of Physics: Conference Series;2013-08-28
4. Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature;Semiconductors;2011-10
5. Photovoltaic detector based on type II heterostructure with deep AlSb/InAsSb/AlSb quantum well in the active region for the midinfrared spectral range;Semiconductors;2011-02
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