Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
Author:
Funder
National Science Foundation
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,General Engineering,Energy Engineering and Power Technology
Reference25 articles.
1. 3.7 kV Vertical GaN PN Diodes;Kizilyalli;IEEE Electron. Device Lett.,2014
2. Accurate dependence of gallium nitride thermal conductivity on dislocation density;Mion;Appl. Phys. Lett.,2006
3. High electron mobility GaN/AlxGa1−xN heterostructures grown by low-pressure metalorganic chemical vapor deposition;Khan;Appl. Phys. Lett.,1991
4. Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors;Yatabe;Jpn. J. Appl. Phys.,2014
5. Analysis of GaN cleaning procedures;Diale;Appl. Surf. Sci.,2005
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Growth and characterization of AlInN/GaN superlattices;Journal of Crystal Growth;2024-03
2. Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates;IEEE Transactions on Electron Devices;2024-02
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