Influence of off-cut angle of (0001) 4H-SiC on the crystal quality of InN grown by RF-MBE
Author:
Publisher
Elsevier BV
Subject
Applied Mathematics
Reference10 articles.
1. Absorption and Emission of Hexagonal InN Evidence of Narrow Fundamental Band Gap Phys;Davydov;Stat. Sol.,2002
2. Indium nitride (InN): A review on growth, characterization, and properties;Bhuiyan;J. Appl. Phys.,2003
3. Growth and characterization of InN on sapphire substrate by RF-MBE;Xiao;J. Cryst. Growth,2005
4. Structural properties of 10 μm thick InN grown on sapphire (0001);Dimakis;Superlattices and Microstructures,2006
5. Investigation of preparation and characterization of GaN films on sapphire (0001) substrates;Yang;Applied Surface Science,2002
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD;Materials;2021-02-22
2. The Photoluminescence Spectra Research of SiC Thin Film under Different Sputtering Powers;Solid State Phenomena;2019-08
3. Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE;Journal of Materials Science: Materials in Electronics;2017-11-28
4. Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy technique;Superlattices and Microstructures;2017-01
5. First-principles simulation of the chemical reactions in GaN growth from Ga2O;Japanese Journal of Applied Physics;2014-10-08
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3