Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE-Reference-Cited by-同舟云学术

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Effect of nitridation time on structural, optical and electrical properties of InN films grown on c-sapphire substrates by PAMBE

Published:2017-11-28 Issue:5 Volume:29 Page:3927-3934
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Ghosh Kankat,Sarkar Ritam,Bhunia Swagata,Laha Apurba

Funder

Ministry of Electronics and Information technology

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/article/10.1007/s10854-017-8332-1/fulltext.html

Reference24 articles.

1. W. Walukiewicz, J.W. Ager III, K.M. Yu, Z. Liliental-Weber, J. Wu, S.X. Li, R.E. Jones, J.D. Denlinger, Structure and electronic properties of InN and In-rich group III-nitride alloys. J. Phys. D 39, R83 (2006)

2. T.L. Tansley, C.P. Foley, Optical band gap of indium nitride. J. Appl. Phys. 59, 3241–3244 (1986)

3. S.P. Fu, Y.F. Chen, Effective mass of InN epilayers. Appl. Phys. Lett. 85, 1523–1525 (2003)

4. V.M. Polyakov, F. Schwierz, Low-field electron mobility in wurtzite InN. Appl. Phys. Lett. 88(1–3), 032101 (2006)

5. S.K. O’Leary, B.E. Foutz, M.S. Shur, L.F. Eastman, Potential performance of indium-nitride-based devices. Appl. Phys. Lett. 88(1–3), 152113 (2006)

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