Evolution of microstructural and electrical properties of sputtered HfO2 ceramic thin films with RF power and substrate temperature-Reference-Cited by-同舟云学术

Evolution of microstructural and electrical properties of sputtered HfO2 ceramic thin films with RF power and substrate temperature

Published:2016-01 Issue:1 Volume:42 Page:138-145
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Das K.C.,Ghosh S.P.,Tripathy N.,Kim D.H.,Lee T.I.,Myoung J.M.,Kar J.P.

Funder

India sponsored Indo-Korea project

DST Science and Engineering Research Board (SERB)

National Research Foundation of Korea (NRF)

Ministry of Science, ICT & Future Planning

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

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5. H.F. Luan, S. Lee, S. Song, Y. Mao, Y. Senaki, D. Roberts, D.L. Kwong, High quality Ta2O5 gate dielectrics with Tox.eq<10Å, in: Proceedings of the Technical Digest-IEDM, (1999) 141.

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