Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals-Reference-Cited by-同舟云学术

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Synthesis of V-doped SiC powder for growth of semi-insulating SiC crystals

Published:2018-12 Issue:18 Volume:44 Page:22632-22637
ISSN:0272-8842
Container-title:Ceramics International
language:en
Short-container-title:Ceramics International

Author:

Jung Eunjin,Kim Younghee,Kwon Yong-Jin,Lee Chae-Young,Lee Myung-Hyun,Lee Won-Jae,Choi Doo-Jin,Jeong Seong-Min

Funder

Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. A 97.8% efficient GaN HEMT boost converter with 300 W output power at 1 MHz;Wu;IEEE Electron Dev. Lett.,2008

2. Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature direct current stress;Wu;J. Appl. Phys.,2015

3. Conductance deep-level transient spectroscopy study of 1 ㎛ gate length 4H-SiC MESFETs;Gassoumi;Solid State Electron.,2006

4. EPR and photoluminescence studies of semi-insulating 4H-SiC samples;Kalabukhova;Phys. B Condens. Matter,2001

5. RF performance of SiC MESFET's on high resistivity substrates;Sriram;IEEE Electron Dev. Lett.,1994

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2. Characterizations on the doping of single-crystal silicon carbide;Materials Today Physics;2022-12

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4. Occurrence forms of major impurity elements in silicon carbide;Ceramics International;2022-01

5. FABRICATION OF HIGHLY DENSE PURE 6H-SiC CERAMICS VIA THE PVT METHOD USING SUB-MICRON SiC POWDERS;Ceramics - Silikaty;2020-01-10

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