EPR and photoluminescence studies of semi-insulating 4H-SiC samples-Reference-Cited by-同舟云学术

EPR and photoluminescence studies of semi-insulating 4H-SiC samples

Published:2001-12 Issue: Volume:308-310 Page:698-701
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Kalabukhova E.N.,Lukin S.N.,Mitchel W.C.,Saxler A.,Jones R.L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Fermi level control and deep levels in semi-insulating 4H–SiC

2. Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

3. EPR and ENDOR investigations of B acceptors in 3C-, 4H- and 6H-silicon carbide

4. E. Sörman, et al., Proceedings of the 23rd International Conference on the Physics of Semiconductors (ICPS), World Scientific Publishing Co Pte Ltd., M. Scheffler (Ed.), 1996, p. 2665.

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