Orthorhombic phase induced ultra-low operation voltage in La-doped BiFeO3 resistive switching devices
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Surfaces, Coatings and Films,Process Chemistry and Technology,Ceramics and Composites,Electronic, Optical and Magnetic Materials
Reference41 articles.
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2. Bipolar electric-field enhanced trapping and detrapping of mobile donors in BiFeO3 memristors;You;ACS Appl. Mater. Interfaces,2014
3. Tri-state bipolar resistive switching behavior in a hydrothermally prepared epitaxial BiFeO3 film;Gao;J. Alloys Compd.,2015
4. Robust non-volatile bipolar resistive switching in sol-gel derived BiFeO3 thin films;Kumari;Superlattice. Microst.,2018
5. Interfacial layer assisted, forming free, and reliable bipolar resistive switching in solution processed BiFeO3 thin films;Kumari;AIP Adv.,2020
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Revival of rhombohedral structure and complex magnetic response in (La,Cr) codoped BiFeO3;Journal of Magnetism and Magnetic Materials;2023-11
2. Top electrode dependence of the write-once-read-many-times resistance switching in BiFeO3 films;Journal of Vacuum Science & Technology B;2023-09-01
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