Chapter 9 Electronic Properties of Surfaces in a-Si: H
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Elsevier
Reference82 articles.
1. The relation between contact potential and planar conduction as a-Si : H films undergo gas adsorption or temperature changes
2. Acoustoelectric measurement of low carrier mobilities in highly resistive films
3. Photoinduced metastable surface effects in boron‐doped hydrogenated amorphous silicon films
4. Effect of surface oxide on transport properties in a-Si:H
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2. Reversible and irreversible effects after oxygen exposure in thick (>1 μm) silicon films deposited by VHF-PECVD on glass substrates investigated by dual beam photoconductivity;Canadian Journal of Physics;2014-07
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4. Distinction between surface and bulk states in surface-photovoltage spectroscopy;Physical Review B;1994-07-15
5. Use of the steady-state photocarrier-grating technique for the study of the surface recombination yelocity of photocarriers and the homogeneity of hydrogenated amorphous silicon films;Philosophical Magazine B;1993-02
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