A study of the optoelectronic and structural properties of glow-discharge-deposited fluorinated, hydrogenated amorphous silicon thin films
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference10 articles.
1. A new amorphous silicon-based alloy for electronic applications
2. Electrical and optical properties of amorphous Si:F:H alloys
3. A new hydro-fluorinated amorphous silicon produced by using intermediate species SiF2
4. The location, evolution, and role of fluorine in glow discharge a-Si:F
5. GLOW-DISCHARGE a-Si : F PREPARED FROM SiF2GAS
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improved fluorinated hydrogenated amorphous silicon alloys prepared using the hot-plasma-box glow-discharge technique;Philosophical Magazine B;1994-08
2. a‐Si:F anda‐Si:F:H prepared by ion‐beam‐assisted reactive deposition;Journal of Applied Physics;1992-08-15
3. Polycrystalline silicon carbide films deposited by low‐power radio‐frequency plasma decomposition of SiF4‐CF4‐H2gas mixtures;Journal of Applied Physics;1991-04
4. Fluorinated hydrogenated silicon films;Thin Solid Films;1990-05
5. Effect of fluorine on the structural and electronic properties ofa-Si:H:F;Physical Review B;1990-04-15
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