Theoretical Simulation of Surface Evolution Using the Random Deposition and Surface Relaxation for Metal Oxide Film in Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Theoretical Simulation of Surface Evolution Using the Random Deposition and Surface Relaxation for Metal Oxide Film in Atomic Layer Deposition

Published:2010-04 Issue:4 Volume:26 Page:371-374
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Ahn Ji-Hoon,Kwon Se-Hun,Kim Jin-Hyock,Kim Ja-Yong,Kang Sang-Won

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Polymers and Plastics,Mechanical Engineering,Mechanics of Materials,Ceramics and Composites

Reference12 articles.

1. Atomic layer epitaxy

2. Growth Per Cycle in Atomic Layer Deposition: A Theoretical Model

3. Surface Chemistry for Atomic Layer Growth

4. Atomic layer epitaxy (ALE) on porous substrates

5. Atomic layer epitaxy

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films;Chemistry of Materials;2024-08-21

2. A review of atomic layer deposition for high lithium-ion battery performance;Journal of Materials Research and Technology;2021-11

3. Numerical Study on the Dependency of Microstructure Morphologies of Pulsed Laser Deposited TiN Thin Films and the Strain Heterogeneities during Mechanical Testing;Materials;2021-03-30

4. Novel benzodithiophene type low band gap polymer solar cell application and device stability study with atomic layer deposition encapsulation technique;Materials Research Express;2019-09-20

5. Full three-dimensional morphology evolution of amorphous thin films for atomic layer deposition;AIP Advances;2018-04

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